This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Industry’s lowest RDS(on) x area
Industry’s best FoM (figure of merit)
Ultra-low gate charge
Zener-protected
Applications
Switching applications
| 屬性 | 數值 |
|---|---|
| 通道類型 | N |
| 最大連續漏極電流 | 4 A |
| 封裝類型 | DPAK |
| 安裝類型 | 表面貼裝 |
| 引腳數目 | 3 |
| 最大漏源電阻值 | 1.73 Ω |
| 通道模式 | 增強 |
| 最大柵閾值電壓 | 5V |
| 最小柵閾值電壓 | 3V |
| 最大功率耗散 | 60 W |
| 晶體管配置 | 單 |
| 最大柵源電壓 | ±30 V |
| 典型柵極電荷@Vgs | 5 nC @ 10 V |
| 長度 | 6.6mm |
| 最高工作溫度 | +150 °C |
| 每片芯片元件數目 | 1 |
| 寬度 | 6.2mm |
