These very high voltage N-channel Power MOSFETs are designed using MDmesh? K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications Product status link requiring superior power density and high efficiency.
Worldwide best FOM (figure of merit)
Ultra low gate charge
Zener-protected
Applications
Switching applications
| 屬性 | 數值 |
|---|---|
| 通道類型 | N |
| 最大連續漏極電流 | 9 A |
| 封裝類型 | TO-220 |
| 安裝類型 | 通孔 |
| 引腳數目 | 3 |
| 最大漏源電阻值 | 1.25 Ω |
| 通道模式 | 增強 |
| 最大柵閾值電壓 | 5V |
| 最小柵閾值電壓 | 3V |
| 最大功率耗散 | 90 W |
| 晶體管配置 | 單 |
| 最大柵源電壓 | ±30 V |
| 寬度 | 4.6mm |
| 每片芯片元件數目 | 1 |
| 長度 | 10.4mm |
| 典型柵極電荷@Vgs | 13 nC @ 10 V |
| 最高工作溫度 | +150 °C |
