The STMicroelectronics SCTWA90N65G2V-4 silicon carbide Power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.
High speed switching performance
Very high operating junction temperature capability
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Source sensing pin for increased efficiency
| 屬性 | 數值 |
|---|---|
| 通道類型 | N |
| 最大連續漏極電流 | 119 A |
| 最大漏源電壓 | 650 V |
| 封裝類型 | HiP247-4 |
| 安裝類型 | 表面貼裝 |
| 引腳數目 | 4 |
| 最大漏源電阻值 | 0.024 O |
| 通道模式 | 增強 |
| 最大柵閾值電壓 | 5V |
| 每片芯片元件數目 | 1 |
| 晶體管材料 | SiC |
