The MDmesh? is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH?horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Tight process control and high manufacturing yields
Low gate input resistance
Applications
Switching application
| 屬性 | 數值 |
|---|---|
| 通道類型 | N |
| 最大連續漏極電流 | 12 A |
| 封裝類型 | D2PAK |
| 安裝類型 | 表面貼裝 |
| 引腳數目 | 3 |
| 最大漏源電阻值 | 350 mΩ |
| 通道模式 | 增強 |
| 最大柵閾值電壓 | 5V |
| 最小柵閾值電壓 | 3V |
| 最大功率耗散 | 160 W |
| 晶體管配置 | 單 |
| 最大柵源電壓 | ±30 V |
| 寬度 | 9.35mm |
| 典型柵極電荷@Vgs | 28 nC @ 10 V |
| 每片芯片元件數目 | 1 |
| 最高工作溫度 | +150 °C |
| 長度 | 10.4mm |
