MDmesh M5 功率 MOSFET 優化用于高功率 PFC 和 PWM 拓撲。 主要特征包括每硅面積的低通態損耗硅片面積與低柵極電荷。 它們設計用于節能、緊湊型且可靠的硬切換應用，例如太陽能轉換器、消費產品電源和電子照明控制。
These devices are N-channel MDmesh? V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH? horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
Worldwide best RDS(on) area
Higher VDSSrating
High dv/dt capability
Excellent switching performance
Easy to drive
Applications
Switching applications
| 屬性 | 數值 |
|---|---|
| 通道類型 | N |
| 最大連續漏極電流 | 7 A |
| 封裝類型 | DPAK |
| 安裝類型 | 表面貼裝 |
| 引腳數目 | 3 |
| 最大漏源電阻值 | 600 mΩ |
| 通道模式 | 增強 |
| 最大柵閾值電壓 | 5V |
| 最小柵閾值電壓 | 4V |
| 最大功率耗散 | 70 W |
| 晶體管配置 | 單 |
| 最大柵源電壓 | ±25 V |
| 每片芯片元件數目 | 1 |
| 最高工作溫度 | +150 °C |
| 典型柵極電荷@Vgs | 15 nC @ 10 V |
| 寬度 | 6.2mm |
| 長度 | 6.6mm |
