These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.
Extremely low gate charge
Excellent output capacitance (COSS) profile
Zener-protected
Applications
Switching applications
| 屬性 | 數值 |
|---|---|
| 通道類型 | N |
| 最大連續漏極電流 | 7 A |
| 封裝類型 | DPAK |
| 安裝類型 | 表面貼裝 |
| 引腳數目 | 3 |
| 最大漏源電阻值 | 680 mΩ |
| 通道模式 | 增強 |
| 最大柵閾值電壓 | 4V |
| 最小柵閾值電壓 | 2V |
| 最大功率耗散 | 85 W |
| 晶體管配置 | 單 |
| 最大柵源電壓 | ±25 V |
| 寬度 | 6.2mm |
| 每片芯片元件數目 | 1 |
| 長度 | 6.6mm |
| 最高工作溫度 | +150 °C |
| 典型柵極電荷@Vgs | 100 nC @ 10 V |
