The device is manufactured in planar technology with “base island” layout and monolithic Darlington configuration.
Good hFE linearity
Monolithic Darlington configuration with integrated antiparallel collector-emitter diode
High fT frequency
Application
Linear and switching industrial equipment
| 屬性 | 數值 |
|---|---|
| 晶體管類型 | NPN |
| 最大直流集電極電流 | 15 A |
| 最大集電極-發射極電壓 | 100 V |
| 封裝類型 | D2PAK |
| 安裝類型 | 表面貼裝 |
| 最大功率耗散 | 70 W |
| 最小直流電流增益 | 750 |
| 晶體管配置 | 共發射極 |
| 最大集電極-基極電壓 | 100 V |
| 最大發射極-基極電壓 | 5 V |
| 引腳數目 | 3 |
| 每片芯片元件數目 | 2 |
